Candidate must have demonstrated hands-on experience with Thin Films CVD/ALD/PVD process development, semiconductor materials design, physical and electrical characterization for advanced memory applications. Background in materials development for advanced memory technology (DRAM, PCRAM, OTS etc.) preferred. Works with other technology team members including materials scientists, device, process and electrical test engineers to solve time critical technology challenges and develop unique solutions for customers in collaborative development partnerships.
Drive improvements in PVD systems and process workflows (substrate treatments, post deposition anneals etc.) to enable reliable and efficient deposition of various materials with different target unit film material properties (crystallographic phase, resistivity, dielectric function etc.).
Able to work independently to develop PVD processes of various materials for use as functional/active layers in memory device stacks while interfacing with other team members/groups to utilize these layers in devices that meet or exceed customer specifications (e.g. J, EOT etc.).
Ensure the execution of best-practices through the development of standard operating procedures for start-up and continued reliable performance of key PVD processes.
Design and execute experiments to develop and optimize materials to meet customer technology requirements.
Work closely with process, characterization and device engineers to drive and execute on development activities. Use subject matter expertise in semiconductor materials, physical and device characterization to develop advanced devices.
Understand physics of materials and how they determine the physical and electrical properties use this understanding to characterize and develop materials for memory applications.
Connect process conditions, physical characterization, and electrical response towards understanding of mechanisms.
Technical degree in Materials Science, Chemical Engineering, Chemistry, or Electrical Engineering (M.S. or Ph.D. preferred).
2-5 years of experience in PVD development, semiconductors or related field preferred. Development of PVD processes for advanced semiconductor applications memory or logic background preferred.
Working experience with developing or characterizing interfaces and thin film stack interactions, emphasis on stacks deposited with PVD or for memory applications, preferred.
Familiarity with common thin-film characterization techniques including: XRR, XRD, XRF, SEM, TEM, Ellipsometry, Auger, SIMS, RBS, XPS.
Proven ability to solve complex analytical problems and provide robust solutions based on solid technical background.
Ability to engage with customers on a highly technical basis.
Excellent teamwork as well as verbal and written communication skills.
Self-motivated, results-oriented with high commitment to work quality in a fast paced environment.
PHYSICAL DEMANDS AND WORK ENVIRONMENT:
Ability to work in clean room environment.
Operate process, electrical and/or physical characterization equipment.
The above statements are intended to describe the general nature and level of work being performed by people assigned to this classification. They are not to be construed as an exhaustive list of all responsibilities, duties, and skills required of personnel so classified. All personnel may be required to perform duties outside of their normal responsibilities from time to time, as needed.
All qualified applicants will receive consideration for employment without regard to race, sex, color, religion, sexual orientation, gender identity, national origin, protected veteran status, or on the basis of disability.