Photodetector Development Engineer - Principal

Macom Ann Arbor , MI 48103

Posted 2 months ago

Company Overview:

MACOM designs and manufactures semiconductor products for Data Center, Telecommunication and Industrial and Defense applications. Headquartered in Lowell, Massachusetts, MACOM has design centers and sales offices throughout North America, Europe and Asia. MACOM is certified to the ISO9001 international quality standard and ISO14001 environmental management standard.

MACOM has more than 65 years of application expertise with multiple design centers, Si, GaAs and InP fabrication, manufacturing, assembly and test, and operational facilities throughout North America, Europe, and Asia. Click here to view our facilities. In addition, MACOM offers foundry services that represents a key core competency within our business.

MACOM sells and distributes products globally via a sales channel comprised of a direct field sales force, authorized sales representatives and leading industry distributors. Our sales team is trained across all of our products to give our customers insights into our entire portfolio.

MACOM is an Equal Opportunity Employer

We consider applicants for all positions without regard to race, color, religion, creed, gender, national origin, age, disability, marital status or veteran status or any other legally protected status

Photodetector Development Engineer - Principal

Job Description:

The Photodetector Development Engineer will be responsible for development of photodiode and avalanche photodiode designs and test processes. This development engineer will work with a product development team to bring to market new photodetector products that can be manufactured cost effectively and in high volume. This person will transfer designs and test processes to manufacture; utilizing process characterization methodologies to ensure that the processes are stable and the designs robust. Additionally, he/she will identify opportunities for cost, yield and performance improvements and execute plans to attain performance and cost targets.

Qualifications:

  • BS, M.S. or PhD. in Electrical Engineering or Physics with +5 years of experience in optoelectronic semiconductor device design.

  • Demonstrated knowledge in compound semiconductor device design and processes required for high frequency applications.

  • Strong understanding of semiconductor device physics, device processing technologies and mask design.

  • Familiarity with typical materials systems for compound semiconductor devices.

  • Experience with data mining and statistics, SPC, DOE, and structured problem solving.

  • Must have a proven track record of solving technical problems, project ownership, meeting deadlines, and multitasking.

  • Must display a strong sense of ownership, drive and dedication to continuous improvement.

  • Must display an enthusiastic boldness for taking on aggressive goals and a commitment to achieving them.

  • Must possess the ability to work collaboratively with cross-functional teams to improve processes.

  • Excellent verbal/written communication skills, including technical writing for summarizing data and findings, writing process and equipment specifications and work instructions.

  • Detail-oriented with strong organizational skills.

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Photodetector Development Engineer - Principal

Macom