Spin Memory is at the forefront of innovation with our breakthrough MRAM technologies that are enabling the electronics, digital applications and devices of tomorrow. Join our team of world-class magnetics, circuits and memory architect experts and discover what we can do together.
As a member of our MRAM design team you will develop custom analog circuits for a variety of new MRAM memory devices. You will design, model, and verify critical custom circuits used in our MRAM memory devices. In the design phase you will also oversee the circuit layout and verify post-layout performance as well as integration into the full chip-level assembly. During design validation you will drive the analysis of the blocks you designed.
Candidate should possess a Bachelor or Master of Science degree in Electrical Engineering with 5+ years of directly relevant experience in custom IC circuit design:
Based in Fremont, just a few miles east of Silicon Valley, we offer competitive pay, a broad range of benefits and an exciting team-oriented environment. Whether you are working in our fab, designing new technologies or creating new devices, every team member is important as we advance MRAM technologies for high performance, low power applications.